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THERMAL SCIENCE
International Scientific Journal
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THEORETICAL STUDY ON INFRARED THERMAL WAVE IMAGING DETECTION OF SEMICONDUCTOR SILICON WAFERS WITH MICRO-CRACK DEFECTS
ABSTRACT
The semiconductor silicon wafer with micro-crack defects was detected using infrared thermal wave imaging technique. The 3-D thermal conduction model in semiconductor silicon wafer excited by linear frequency modulated continuous laser was established, and it was solved by finite element method. The results show the effectiveness of the proposed method for detecting micro-crack defects in semiconductor silicon wafers.
KEYWORDS
infrared thermal wave imaging technique, Micro-crack, semiconductor silicon wafer, Infrared thermal imaging, linear frequency, finite element method
PAPER SUBMITTED: 2020-06-01
PAPER REVISED: 2020-07-01
PAPER ACCEPTED: 2020-07-10
PUBLISHED ONLINE: 2020-11-27
DOI REFERENCE: https://doi.org/10.2298/TSCI2006011T
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REFERENCES
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© 2026 Society of Thermal Engineers of Serbia. Published by the Vinča Institute of Nuclear Sciences, National Institute of the Republic of Serbia, Belgrade, Serbia. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution-NonCommercial-NoDerivs 4.0 International licence